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STB80NE03L-06_06 PDF预览

STB80NE03L-06_06

更新时间: 2024-02-12 16:24:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
13页 406K
描述
N-channel 30V - 0.005ohm - 85A - D2PAK STripFET TM Power MOSFET

STB80NE03L-06_06 数据手册

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STB80NE03L-06  
N-channel 30V - 0.005- 85A - D2PAK  
STripFET™ Power MOSFET  
General features  
Type  
VDSS  
RDS(on)  
ID  
STB80NE03L-06  
30V  
<0.006  
80A  
Exceptional dv/dt capability  
Low gate charge 100°C  
100% Avalanche tested  
3
1
2
D PAK  
Description  
This Power MOSFET is the latest development of  
STMicroelectronics unique “Single Feature  
Size™” strip-based process. The resulting  
transistor shows extremely high packing density  
for low on-resistance, rugged avalanche  
characteristics and less critical alignment steps  
therefore a remarkable manufacturing  
reproducibility.  
Internal schematic diagram  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STB80NE03L-06  
B80NE03L  
PAK  
Tape & reel  
July 2006  
Rev 6  
1/13  
www.st.com  
13  

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