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MTB75N03HDL PDF预览

MTB75N03HDL

更新时间： 2024-11-08 22:14:11
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
12页 306K
描述
TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS

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MTB75N03HDL 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.16Is Samacsys：N
其他特性：LOGIC LEVEL COMPATIBLE外壳连接：DRAIN
配置：SINGLE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：75 A最大漏极电流 (ID)：75 A
最大漏源导通电阻：0.007 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2.5 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE晶体管元件材料：SILICON
Base Number Matches：1

MTB75N03HDL 数据手册

 浏览型号MTB75N03HDL的Datasheet PDF文件第2页浏览型号MTB75N03HDL的Datasheet PDF文件第3页浏览型号MTB75N03HDL的Datasheet PDF文件第4页浏览型号MTB75N03HDL的Datasheet PDF文件第5页浏览型号MTB75N03HDL的Datasheet PDF文件第6页浏览型号MTB75N03HDL的Datasheet PDF文件第7页 
Order this document  
by MTB75N03HDL/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
LOGIC LEVEL  
75 AMPERES  
25 VOLTS  
N–Channel Enhancement–Mode Silicon Gate  
2
The D PAK package has the capability of housing a larger die  
R
= 9 mOHM  
DS(on)  
than any existing surface mount package which allows it to be used  
in applications that require the use of surface mount components  
with higher power and lower R  
capabilities. This advanced  
DS(on)  
high–cell density HDTMOS power FET is designed to withstand  
high energy in the avalanche and commutation modes. This new  
energy efficient design also offers a drain–to–source diode with a  
fast recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters and PWM motor  
controls, these devices are particularly well suited for bridge circuits  
where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected  
voltage transients.  
D
G
•
•
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
CASE 418B–02, Style 2  
2
D PAK  
S
•
•
•
•
•
•
Diode is Characterized for Use in Bridge Circuits  
I
and V  
Specified at Elevated Temperature  
, High–Cell Density, HDTMOS  
DSS  
DS(on)  
DS(on)  
Ultra Low R  
Short Heatsink Tab Manufactured — Not sheared  
Specially Designed Leadframe for Maximum Power Dissipation  
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
25  
Unit  
Drain–to–Source Voltage  
V
DSS  
Vdc  
Vdc  
Drain–to–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
25  
Gate–to–Source Voltage — Continuous  
Gate–to–Source Voltage — Non–Repetitive (t ≤ 10 ms)  
V
± 15  
± 20  
Vdc  
Vpk  
GS  
V
GSM  
p
Drain Current — Continuous  
Drain Current — Continuous @ 100°C  
Drain Current — Single Pulse (t ≤ 10 µs)  
I
I
75  
59  
225  
Adc  
Apk  
D
D
p
I
DM  
Total Power Dissipation  
Derate above 25°C  
Total Power Dissipation @ T = 25°C (1)  
P
D
125  
1.0  
2.5  
Watts  
W/°C  
Watts  
A
Operating and Storage Temperature Range  
– 55 to 150  
°C  
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
280  
mJ  
J
(V  
DD  
= 25 Vdc, V = 5.0 Vdc, I = 75 Apk, L = 0.1 mH, R = 25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
Thermal Resistance — Junction to Ambient (1)  
R
R
R
1.0  
62.5  
50  
°C/W  
°C  
θJC  
θJA  
θJA  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
260  
L
(1) When mounted with the minimum recommended pad size.  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
E–FET and HDTMOS are trademarks of Motorola, Inc.  
TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1995  
1234567...12

中文翻译

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MTB75N03HDL 替代型号

型号 品牌 替代类型 描述 数据表
STB80NE03L-06T4 STMICROELECTRONICS

功能相似

 80A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
MTB75N03HDLT4 ONSEMI

功能相似

 75A, 25V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
STB80NE03L-06 STMICROELECTRONICS

功能相似

 N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK

与MTB75N03HDL相关器件

型号 品牌 获取价格 描述 数据表
MTB75N03HDLT4 ONSEMI

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 		75A, 25V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
MTB75N03HDLT4 MOTOROLA

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 		75A, 30V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET
MTB75N05HD MOTOROLA

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 		TMOS POWER FET 75 AMPERES 50 VOLTS
MTB75N05HDG ONSEMI

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 		MTB75N05HDG
MTB75N05HDL MOTOROLA

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 		Transistor
MTB75N05HDT4 MOTOROLA

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 		Power Field-Effect Transistor, 75A I(D), 50V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me
MTB75N05HDT4G ONSEMI

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 		暂无描述
MTB75N06 MOTOROLA

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 		TMOS POWER FET 75 AMPERES 60 VOLTS
MTB75N06HD MOTOROLA

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 		TMOS POWER FET 75 AMPERES 60 VOLTS
MTB75N06HDT4 MOTOROLA

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 		Power Field-Effect Transistor, 75A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta

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