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MTB6N60ET4 PDF预览

MTB6N60ET4

更新时间： 2024-01-07 23:23:36
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体管
页数 文件大小 规格书
10页 192K
描述
Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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MTB6N60ET4 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.74外壳连接：DRAIN
配置：SINGLE最小漏源击穿电压：600 V
最大漏极电流 (ID)：6 A最大漏源导通电阻：1.2 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管元件材料：SILICON
Base Number Matches：1

MTB6N60ET4 数据手册

 浏览型号MTB6N60ET4的Datasheet PDF文件第2页浏览型号MTB6N60ET4的Datasheet PDF文件第3页浏览型号MTB6N60ET4的Datasheet PDF文件第4页浏览型号MTB6N60ET4的Datasheet PDF文件第5页浏览型号MTB6N60ET4的Datasheet PDF文件第6页浏览型号MTB6N60ET4的Datasheet PDF文件第7页 
Order this document  
by MTB6N60E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
6.0 AMPERES  
600 VOLTS  
N–Channel Enhancement–Mode Silicon Gate  
2
The D PAK package has the capability of housing a larger die  
R
= 1.2 OHM  
DS(on)  
than any existing surface mount package which allows it to be used  
in applications that require the use of surface mount components  
with higher power and lower R  
capabilities. This advanced  
DS(on)  
TMOS E–FET is designed to withstand high energy in the  
avalanche and commutation modes. The new energy efficient  
design also offers a drain–to–source diode with a fast recovery  
time. Designed for low voltage, high speed switching applications in  
power supplies, converters and PWM motor controls, these  
devices are particularly well suited for bridge circuits where diode  
speed and commutating safe operating areas are critical and offer  
additional safety margin against unexpected voltage transients.  
D
•
•
•
Robust High Voltage Termination  
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
G
CASE 418B–03, Style 2  
2
D PAK  
S
•
•
•
•
•
Diode is Characterized for Use in Bridge Circuits  
I
and V  
Specified at Elevated Temperature  
DSS  
DS(on)  
Short Heatsink Tab Manufactured — Not Sheared  
Specially Designed Leadframe for Maximum Power Dissipation  
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4  
Suffix to Part Number  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
Unit  
Drain–to–Source Voltage  
V
DSS  
600  
Vdc  
Drain–to–Gate Voltage (R  
= 1.0 MΩ)  
Gate–Source Voltage — Continuous  
V
600  
Vdc  
GS  
DGR  
V
± 20  
± 40  
Vdc  
Vpk  
GS  
Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)  
V
GSM  
p
Drain Current — Continuous  
Drain Current — Continuous @ 100°C  
Drain Current — Single Pulse (t ≤ 10 µs)  
I
I
6.0  
4.6  
18  
Adc  
D
D
I
Apk  
p
DM  
Total Power Dissipation @ 25°C  
Derate above 25°C  
P
D
125  
1.0  
2.5  
Watts  
W/°C  
Watts  
(1)  
Total Power Dissipation @ T = 25°C  
A
Operating and Storage Temperature Range  
T , T  
J stg  
– 55 to 150  
°C  
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 100 Vdc, V  
= 10 Vdc, Peak I = 9.0 Apk, L = 10 mH, R = 25 Ω)  
GS L G  
405  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
Thermal Resistance — Junction to Ambient  
R
R
R
1.0  
62.5  
50  
°C/W  
°C  
θJC  
θJA  
θJA  
(1)  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
260  
L
(1) When surface mounted to an FR4 board using the minimum recommended pad size.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1997  
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