5秒后页面跳转
捷配首页

Datasheet > MTB6N60ET4
MTB6N60ET4 PDF预览

MTB6N60ET4

更新时间： 2024-11-09 14:26:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体管
页数 文件大小 规格书
10页 192K
描述
Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

阅读下载

中文翻译

获取价格

MTB6N60ET4 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.74外壳连接：DRAIN
配置：SINGLE最小漏源击穿电压：600 V
最大漏极电流 (ID)：6 A最大漏源导通电阻：1.2 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管元件材料：SILICON
Base Number Matches：1

MTB6N60ET4 数据手册

 浏览型号MTB6N60ET4的Datasheet PDF文件第2页浏览型号MTB6N60ET4的Datasheet PDF文件第3页浏览型号MTB6N60ET4的Datasheet PDF文件第4页浏览型号MTB6N60ET4的Datasheet PDF文件第5页浏览型号MTB6N60ET4的Datasheet PDF文件第6页浏览型号MTB6N60ET4的Datasheet PDF文件第7页 
Order this document  
by MTB6N60E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
6.0 AMPERES  
600 VOLTS  
N–Channel Enhancement–Mode Silicon Gate  
2
The D PAK package has the capability of housing a larger die  
R
= 1.2 OHM  
DS(on)  
than any existing surface mount package which allows it to be used  
in applications that require the use of surface mount components  
with higher power and lower R  
capabilities. This advanced  
DS(on)  
TMOS E–FET is designed to withstand high energy in the  
avalanche and commutation modes. The new energy efficient  
design also offers a drain–to–source diode with a fast recovery  
time. Designed for low voltage, high speed switching applications in  
power supplies, converters and PWM motor controls, these  
devices are particularly well suited for bridge circuits where diode  
speed and commutating safe operating areas are critical and offer  
additional safety margin against unexpected voltage transients.  
D
•
•
•
Robust High Voltage Termination  
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
G
CASE 418B–03, Style 2  
2
D PAK  
S
•
•
•
•
•
Diode is Characterized for Use in Bridge Circuits  
I
and V  
Specified at Elevated Temperature  
DSS  
DS(on)  
Short Heatsink Tab Manufactured — Not Sheared  
Specially Designed Leadframe for Maximum Power Dissipation  
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4  
Suffix to Part Number  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
Unit  
Drain–to–Source Voltage  
V
DSS  
600  
Vdc  
Drain–to–Gate Voltage (R  
= 1.0 MΩ)  
Gate–Source Voltage — Continuous  
V
600  
Vdc  
GS  
DGR  
V
± 20  
± 40  
Vdc  
Vpk  
GS  
Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)  
V
GSM  
p
Drain Current — Continuous  
Drain Current — Continuous @ 100°C  
Drain Current — Single Pulse (t ≤ 10 µs)  
I
I
6.0  
4.6  
18  
Adc  
D
D
I
Apk  
p
DM  
Total Power Dissipation @ 25°C  
Derate above 25°C  
P
D
125  
1.0  
2.5  
Watts  
W/°C  
Watts  
(1)  
Total Power Dissipation @ T = 25°C  
A
Operating and Storage Temperature Range  
T , T  
J stg  
– 55 to 150  
°C  
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 100 Vdc, V  
= 10 Vdc, Peak I = 9.0 Apk, L = 10 mH, R = 25 Ω)  
GS L G  
405  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
Thermal Resistance — Junction to Ambient  
R
R
R
1.0  
62.5  
50  
°C/W  
°C  
θJC  
θJA  
θJA  
(1)  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
260  
L
(1) When surface mounted to an FR4 board using the minimum recommended pad size.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1997  
1234567...10

中文翻译

下载PDF

与MTB6N60ET4相关器件

型号 品牌 获取价格 描述 数据表
MTB6N61E1 MOTOROLA

获取价格

 		Transistor
MTB75N03HDL MOTOROLA

获取价格

 		TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS
MTB75N03HDL ONSEMI

获取价格

 		75A, 25V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
MTB75N03HDLT4 ONSEMI

获取价格

 		75A, 25V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
MTB75N03HDLT4 MOTOROLA

获取价格

 		75A, 30V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET
MTB75N05HD MOTOROLA

获取价格

 		TMOS POWER FET 75 AMPERES 50 VOLTS
MTB75N05HDG ONSEMI

获取价格

 		MTB75N05HDG
MTB75N05HDL MOTOROLA

获取价格

 		Transistor
MTB75N05HDT4 MOTOROLA

获取价格

 		Power Field-Effect Transistor, 75A I(D), 50V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me
MTB75N05HDT4G ONSEMI

获取价格

 		暂无描述

与MTB6N60ET4相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证