Datasheet > MTB6N60ET4

MTB6N60ET4

更新时间： 2024-01-23 05:59:49

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体管
页数	文件大小	规格书
10页	192K
描述
Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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技术参数
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MTB6N60ET4 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	HTS代码：	8541.29.00.95
风险等级：	5.74	外壳连接：	DRAIN
配置：	SINGLE	最小漏源击穿电压：	600 V
最大漏极电流 (ID)：	6 A	最大漏源导通电阻：	1.2 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	晶体管元件材料：	SILICON
Base Number Matches：	1

MTB6N60ET4 数据手册

300

200

100

= 300 V

= 6 A

= 10 V

= 25°C

d(off)

100

d(on)

= 6 A

= 25°C

100

Q , TOTAL CHARGE (nC)

, GATE RESISTANCE (OHMS)

Figure 8. Gate–To–Source and Drain–To–Source

Voltage versus Total Charge

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

DRAIN–TO–SOURCE DIODE CHARACTERISTICS

= 0 V

= 25

°C

0.50

0.55

0.60

0.65

0.70

0.75

0.80

0.85

, SOURCE–TO–DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus Current

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define

the maximum simultaneous drain–to–source voltage and

drain current that a transistor can handle safely when it is for-

ward biased. Curves are based upon maximum peak junc-

able operation, the stored energy from circuit inductance dis-

sipated in the transistor while in avalanche must be less than

the rated limit and adjusted for operating conditions differing

from those specified. Although industry practice is to rate in

terms of energy, avalanche energy capability is not a con-

stant. The energy rating decreases non–linearly with an in-

crease of peak current in avalanche and peak junction

temperature.

tion temperature and a case temperature (T ) of 25°C. Peak

repetitive pulsed power limits are determined by using the

thermal response data in conjunction with the procedures

discussed in AN569, “Transient Thermal Resistance–Gener-

al Data and Its Use.”

Although many E–FETs can withstand the stress of drain–

to–source avalanche at currents up to rated pulsed current

Switching between the off–state and the on–state may tra-

verse any load line provided neither rated peak current (I

)

) is exceeded and the transition time

), the energy rating is specified at rated continuous cur-

nor rated voltage (V

DSS

rent (I ), in accordance with industry custom. The energy rat-

(t ,t ) do not exceed 10 µs. In addition the total power aver-

r f

ing must be derated for temperature as shown in the

accompanying graph (Figure 12). Maximum energy at cur-

aged over a complete switching cycle must not exceed

– T )/(R ).

J(MAX)

θJC

rents below rated continuous I can safely be assumed to

A Power MOSFET designated E–FET can be safely used

in switching circuits with unclamped inductive loads. For reli-

Motorola TMOS Power MOSFET Transistor Device Data

equal the values indicated.

1 2 3 456 7 8...10

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