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MT58L128L36P1T-5IT PDF预览

MT58L128L36P1T-5IT

更新时间: 2024-01-02 18:32:33
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
27页 447K
描述
Cache SRAM, 128KX36, 3.1ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100

MT58L128L36P1T-5IT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP,
针数:100Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.44最长访问时间:3.1 ns
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
长度:20 mm内存密度:4718592 bit
内存集成电路类型:CACHE SRAM内存宽度:36
湿度敏感等级:3功能数量:1
端子数量:100字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX36封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

MT58L128L36P1T-5IT 数据手册

 浏览型号MT58L128L36P1T-5IT的Datasheet PDF文件第1页浏览型号MT58L128L36P1T-5IT的Datasheet PDF文件第3页浏览型号MT58L128L36P1T-5IT的Datasheet PDF文件第4页浏览型号MT58L128L36P1T-5IT的Datasheet PDF文件第5页浏览型号MT58L128L36P1T-5IT的Datasheet PDF文件第6页浏览型号MT58L128L36P1T-5IT的Datasheet PDF文件第7页 
PRELIMINARY  
4Mb : 256K x 18, 128K x 32/36  
PIPELINED, SCD SYNCBURST SRAM  
4Mb SYNCBURST™  
SRAM  
MT58L256L18P1, MT58L128L32P1,  
MT58L128L36P1; MT58L256V18P1,  
MT58L128V32P1, MT58L128V36P1  
3.3V VDD, 3.3V o r 2.5V I/O, Pip e lin e d , Sin g le -Cycle  
De se le ct  
FEATURES  
• Fast clock an d OE# access tim es  
• Sin gle +3.3V +0.3V/-0.165V power supply (VDD  
• Separate +3.3V or +2.5V isolated output buffer  
supply (VDDQ)  
100-PIN TQFP*  
)
• SNOOZE MODE for reduced-power stan dby  
• Sin gle-cycle deselect (Pen tium ® BSRAM-com patible)  
• Com m on data in puts an d data outputs  
• In dividual BYTE WRITE con trol an d GLOBAL  
WRITE  
• Th ree ch ip en ables for sim ple depth expan sion an d  
address pipelin in g  
• Clock-con trolled an d registered addresses, data I/Os  
an d con trol sign als  
• In tern ally self-tim ed WRITE cycle  
• Burst con trol pin (in terleaved or lin ear burst)  
• Autom atic power-down for portable application s  
• 100-lead TQFP package for h igh den sity, h igh speed  
• 119-pin BGA package  
119-PIN BGA  
• Low capacitive bus loadin g  
• x18, x32 an d x36 version s available  
OPTIONS  
MARKING  
• Tim in g (Access/Cycle/MHz)  
2.3n s/4n s/250 MHz  
2.6n s/4.4n s/225 MHz  
3.1n s/5n s/200 MHz  
3.5n s/6n s/166 MHz  
4.0n s/7.5n s/133 MHz  
5n s/10n s/100 MHz  
• Con figuration s  
3.3V I/O  
-4  
-4.4  
-5  
-6  
-7.5  
-10  
256K x 18  
128K x 32  
128K x 36  
MT58L256L18P1  
MT58L128L32P1  
MT58L128L36P1  
*JEDEC-standard MS-026 BHA (LQFP).  
2.5V I/O  
GENERAL DESCRIPTION  
Th e Micron ® Syn cBurstSRAM fam ily em ploys  
h igh -speed, low-power CMOS design s th at are fabri-  
cated usin g an advan ced CMOS process.  
256K x 18  
128K x 32  
128K x 36  
MT58L256V18P1  
MT58L128V32P1  
MT58L128V36P1  
• Packages  
Micro n s 4Mb Syn cBu rst SRAMs in t egrat e a  
256K x 18, 128K x 32, or 128K x 36 SRAM core with  
advan ced syn ch ron ous periph eral circuitry an d a 2-bit  
burst coun ter. All syn ch ron ous in puts pass th rough  
registers con trolled by a positive-edge-triggered sin gle  
clock in put (CLK). Th e syn ch ron ous in puts in clude all  
addresses, all data in puts, active LOW ch ip en able  
(CE#), two addition al ch ip en ables for easy depth ex-  
100-pin TQFP  
T
B
119-pin , 14m m x 22m m BGA  
Operatin g Tem perature Ran ge  
Com m ercial (0°C to +70°C)  
In dustrial (-40°C to +85°C)  
Non e  
IT  
Part Number Example:  
MT58L256L18P1T-6 IT  
4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM  
MT58L256L18P1.p65 – Rev. 3/00  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
1
©2000, Micron Technology, Inc.  

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