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MT58L128L36P1T-5IT PDF预览

MT58L128L36P1T-5IT

更新时间: 2024-02-10 05:51:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
27页 447K
描述
Cache SRAM, 128KX36, 3.1ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100

MT58L128L36P1T-5IT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP,
针数:100Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.44最长访问时间:3.1 ns
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
长度:20 mm内存密度:4718592 bit
内存集成电路类型:CACHE SRAM内存宽度:36
湿度敏感等级:3功能数量:1
端子数量:100字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX36封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

MT58L128L36P1T-5IT 数据手册

 浏览型号MT58L128L36P1T-5IT的Datasheet PDF文件第21页浏览型号MT58L128L36P1T-5IT的Datasheet PDF文件第22页浏览型号MT58L128L36P1T-5IT的Datasheet PDF文件第23页浏览型号MT58L128L36P1T-5IT的Datasheet PDF文件第24页浏览型号MT58L128L36P1T-5IT的Datasheet PDF文件第25页浏览型号MT58L128L36P1T-5IT的Datasheet PDF文件第26页 
PRELIMINARY  
4Mb : 256K x 18, 128K x 32/36  
PIPELINED, SCD SYNCBURST SRAM  
119-PINBGA  
22.00 ±0.20  
19.94 ±0.10  
Substrate material:  
BT resin laminate  
0.60 ±0.10  
0.90 ±0.10  
14.00 ±0.10  
11.94 ±0.10  
0.15  
2.40 MAX  
SEATING PLANE  
A1 CORNER  
A1 CORNER  
(dimension applies to a  
noncollapsed solder ball)  
0.75 ±0.15  
Ø
1.27 (TYP)  
7.62  
1.27 (TYP)  
20.32  
MAX  
NOTE: 1. All dimensions in millimeters  
or typical where noted.  
MIN  
2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side.  
3. Solder ball land pad is 0.6mm.  
8000 S. Fe d e ra l Wa y, P.O. Bo x 6, Bo ise , ID 83707-0006, Te l: 208-368-3900  
E-m a il: p ro d m kt g @m icro n .co m , In t e rn e t : h t t p ://w w w .m icro n .co m , Cu st o m e r Co m m e n t Lin e : 800-932-4992  
Micron is a registered trademark and SyncBurst is a trademark of Micron Technology, Inc.  
Pentium is a registered trademark of Intel Corporation.  
4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM  
MT58L256L18P1.p65 – Rev. 3/00  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2000, Micron Technology, Inc.  
26  

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