Datasheet > MSCSM120DAM31CTBL1NG-Module

MSCSM120DAM31CTBL1NG-Module

更新时间： 2023-12-06 20:11:44

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美国微芯 - MICROCHIP		/
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'? SiC Power MOSFET- Low RDS(on)- High temperature performance? Kelvin source for easy drive? Very

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MSCSM120DAM31CTBL1NG

Electrical Specifications

1.2

SiC Diode Ratings and Characteristics (Per SiC Diode)

The following table lists the SiC diode ratings and characteristics of MSCSM120DAM31CTBL1NG device.

Table 1-5.ꢀSiC Diode Ratings and Characteristics

Symbol Characteristic

V_RRMPeak repetitive reverse voltage

I_RMReverse leakage current V_R= 1200 V

Test Conditions

Min

—

Typ

—

Max

1200

200

—

Unit

T_J= 25 °C

T_J= 175 °C

T_H= 100 °C

T_J= 25 °C

T_J= 175 °C

μA

250

I_F

DC forward current

—

V_F

Diode forward voltage

I_F= 50 A

1.5

2.1

224

246

1.8

—

Q_C

Total capacitive charge

Total capacitance

V_R= 600 V

f = 1 MHz

—

V_R= 400 V

f = 1 MHz

—

182

—

V_R= 800 V

R_thJH

Junction-to-heatsink thermal

resistance

λ_paste= 3.4 W/mK

0.635

°C/W

1.3

Thermal and Package Characteristics

The following table lists the thermal and package characteristics of the MSCSM120DAM31CTBL1NG device.

Table 1-6.ꢀThermal and Package Characteristics

Symbol Characteristic

Min

Typ

Max

Unit

V_ISOL

RMS isolation voltage, any terminal to case t = 1 min,

2500

—

50 Hz/60 Hz

T_J

Operating junction temperature range

–55

—

175

°C

T_JOP

Recommended junction temperature under switching

conditions

T_Jmax–25

T_STG

T_C

Storage case temperature

Operating case temperature

–55

1.5

—

125

—

Torque

Mounting torque

Package weight

To heatsink

—

N.m

13.5

—

DS00004079A-page 5

Datasheet

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1 2 3 456 7 8...16

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