Datasheet > MSCSM120DAM31CTBL1NG-Module

MSCSM120DAM31CTBL1NG-Module

更新时间： 2023-12-06 20:11:44

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
16页	776K
描述
'? SiC Power MOSFET- Low RDS(on)- High temperature performance? Kelvin source for easy drive? Very

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MSCSM120DAM31CTBL1NG-Module 数据手册

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MSCSM120DAM31CTBL1NG

Electrical Specifications

The following table lists the dynamic characteristics of MSCSM120DAM31CTBL1NG device.

Table 1-3.ꢀDynamic Characteristics

Symbol Characteristic

Test Conditions

Min

—

Typ

3020

270

Max

—

Unit

Input capacitance

Output capacitance

= 0 V

iss

= 1000 V

—

oss

rss

f = 1 MHz

Reverse transfer

capacitance

—

Total gate charge

Gate-Source charge

Gate-Drain charge

Turn-on delay time

Rise time

= –5 V/20 V

= 800 V

—

232

—

Bus

= 40 A

= –5 V/20 V

= 600 V

d(on)

Bus

= 50 A

Turn-off delay time

Fall time

d(off)

= 8 Ω

Gon

Goff

= 4.7 Ω

Turn-on energy

Turn-off energy

= –5 V/20 V

= 600 V

T = 150 °C

—

0.99

0.66

—

off

Bus

T = 150 °C

= 50 A

= 8 Ω

Gon

Goff

= 4.7 Ω

Internal gate resistance

—

0.88

—

Gint

Junction-to-heatsink thermal resistance

λ = 3.4 W/mK

0.483

°C/W

thJH

The following table lists the body diode ratings and characteristics of MSCSM120DAM31CTBL1NG device.

Table 1-4.ꢀBody Diode Ratings and Characteristics

Symbol Characteristic

Test Conditions

V_GS= 0 V

Min

Typ

Max

Unit

V_SD

Diode forward voltage

—

I_SD= 40 A

V_GS= –5 V

I_SD= 40 A

—

4.2

—

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

I_SD= 40 A

—

V_GS= –5 V

Q_rr

I_rr

550

13.5

V_R= 800 V

di_F/dt = 1000 A/µs

DS00004079A-page 4

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