Datasheet > MSCSM120HM083AG-Module

MSCSM120HM083AG-Module

更新时间： 2023-12-06 20:03:15

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
13页	1028K
描述
? SiC Power MOSFET - Low RDS(on) - High temperature performance? Kelvin source for easy drive? Low

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MSCSM120HM083AG-Module 数据手册

MSCSM120HM083AG

Full Bridge SiC Power Module

Product Overview

The MSCSM120HM083AG device is a full bridge 1200V, 251A silicon carbide (SiC) power module.

Note:ꢀ All ratings at T_J= 25 °C, unless otherwise specified.

These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.

CAUTION

DS00004648A-page 1

Data Sheet

and its subsidiaries

12 3 4 5 6 7...13

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