Datasheet > MSCSM120HRM163AG-Module

MSCSM120HRM163AG-Module

更新时间： 2023-12-06 20:09:10

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
21页	2307K
描述
? SiC Power MOSFET - Low RDS(on) - High temperature performance ? Kelvin source for easy drive ?

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MSCSM120HRM163AG-Module 数据手册

MSCSM120HRM163AG

T-Type SiC MOSFET Power Module

Product Overview

The MSCSM120HRM163AG device is a T-type Silicon Carbide (SiC) MOSFET power module with a phase leg

1200V, 173A and a dual common source 700V, 124A.

The following figures show the electrical and pinout location diagrams of the device.

Figure 1. Electrical Diagram

Figure 2. Pinout Location Diagram

Notes:ꢀ

•

Pins 1/2/3; 10/11/12; 5/6/7/8; 21/22/23/24 must be shorted together.

All ratings at T_J= 25 °C, unless otherwise specified.

These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.

CAUTION

DS00004932A-page 1

Data Sheet

and its subsidiaries

12 3 4 5 6 7...21

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