Datasheet > MSCSM120VR1M16CT3AG-Module

MSCSM120VR1M16CT3AG-Module

更新时间： 2023-12-06 20:10:47

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
17页	1183K
描述
? SiC Power MOSFET - Low RDS(on) - High temperature performance ? Kelvin source for easy drive ? L

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MSCSM120VR1M16CT3AG-Module 数据手册

MSCSM120VR1M16CT3AG

Vienna Rectifier SiC MOSFET Power Module

Product Overview

The MSCSM120VR1M16CT3AG device is a Vienna rectifier 1200V, 173A silicon carbide (SiC) power module.

Notes:ꢀ

•

All multiple inputs and outputs must be shorted together: 10 to 12; 13 to 16; 18 to 20; 29 to 32.

All ratings at T_J= 25 °C, unless otherwise specified.

These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.

CAUTION

DS00004703A-page 1

Data Sheet

and its subsidiaries

12 3 4 5 6 7...17

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