Datasheet > MSCSM120TLM11CAG-Module

MSCSM120TLM11CAG-Module

更新时间： 2023-12-06 20:03:35

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
16页	1708K
描述
? SiC Power MOSFET - Low RDS(on) - High temperature performance ? Kelvin source for easy drive ?

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MSCSM120TLM11CAG-Module 数据手册

MSCSM120TLM11CAG

Three Level Inverter SiC MOSFET Power Module

Product Overview

The MSCSM120TLM11CAG device is a three level inverter 1200V/251A silicon carbide (SiC) MOSFET power

module.

VBUS

NEUTRAL1

NEUTRAL2

0/ VBUS

OUT

G 2

Note:ꢀ All ratings at T_J= 25 °C, unless otherwise specified.

These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.

CAUTION

DS00004353A-page 1

Datasheet

and its subsidiaries

12 3 4 5 6 7...16

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