Datasheet > MSCSM120TLM31C3AG-Module

MSCSM120TLM31C3AG-Module

更新时间： 2023-12-06 20:08:00

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
17页	1280K
描述
? SiC Power MOSFET - Low RDS(on) - High temperature performance ? Kelvin source for easy drive ?

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MSCSM120TLM31C3AG-Module 数据手册

MSCSM120TLM31C3AG

Three Level Inverter SiC MOSFET Power Module

Product Overview

The MSCSM120TLM31C3AG device is a 1200V/89A three level inverter silicon carbide (SiC) MOSFET power

module.

24 23 22 21

10 11 12

Note:ꢀ

1. All ratings at T_J= 25 °C, unless otherwise specified.

2. All multiple inputs and outputs must be shorted together: 1/2/3 ; 10/11/12 ; 5/6/7/8 ; 21/22/23/24

These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.

CAUTION

DS00004366A-page 1

Datasheet

and its subsidiaries

12 3 4 5 6 7...17

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