Datasheet > MSCSM120HM083CAG-Module

MSCSM120HM083CAG-Module

更新时间： 2023-12-06 20:07:50

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
16页	1248K
描述
??? ?SiC Power MOSFET??? ?Kelvin source for easy drive??? ?Low stray inductance??? ?High efficienc

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MSCSM120HM083CAG-Module 数据手册

MSCSM120HM083CAG

Full Bridge SiC Power Module

Product Overview

The MSCSM120HM083CAG device is a 1200 V, 251 A full bridge silicon carbide (SiC) power module.

All ratings at T_J= 25 °C, unless otherwise specified.

Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.

DS00003930A-page 1

Datasheet

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