Datasheet > MSCSM120HM16CTBL3NG-Module

MSCSM120HM16CTBL3NG-Module

更新时间： 2023-12-06 20:11:41

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
15页	426K
描述
'? SiC Power MOSFET- Low RDS(on)- High temperature performance? Kelvin source for easy drive? Very

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MSCSM120HM16CTBL3NG-Module 数据手册

MSCSM120HM16CTBL3NG

Dual Phase Leg SiC MOSFET Power Module

Product Overview

The MSCSM120HM16CTBL3NG device is a dual phase leg 1200 V/150 A silicon carbide (SiC) MOSFET power

module.

S1 G1

G3 S3

+VBUS2

+VBUS1

0/VBUS2

0/VBUS1

OUT2

OUT1

S2 G2

T2 T1

G4 S4

All ratings at T_J= 25 °C, unless otherwise specified.

Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.

DS00004107A-page 1

Datasheet

and its subsidiaries

12 3 4 5 6 7...15

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