Datasheet > MSCSM120DUM11T3AG-Module

MSCSM120DUM11T3AG-Module

更新时间： 2023-12-06 20:11:19

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
14页	471K
描述
? SiC Power MOSFET - Low RDS(on) - High temperature performance ? Kelvin source for easy drive ?

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MSCSM120DUM11T3AG-Module 数据手册

MSCSM120DUM11T3AG

Dual Common Source SiC MOSFET Power Module

Product Overview

The MSCSM120DUM11T3AG device is a 1200V/254A dual common source silicon carbide (SiC) MOSFET power

module.

All multiple inputs & outputs must be shorted

together

13/14/15/16 ; 18/19/20/22/23/25/26/27/28

; 29/30/31/32

All ratings at T_J= 25 °C, unless otherwise specified.

These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.

CAUTION

DS00004356A-page 1

Datasheet

and its subsidiaries

12 3 4 5 6 7...14

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