Datasheet > MSCSM120DUM31CTBL1NG-Module

MSCSM120DUM31CTBL1NG-Module

更新时间： 2023-12-06 20:02:20

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
16页	859K
描述
'? SiC Power MOSFET- Low RDS(on)- High temperature performance? Kelvin source for easy drive? Very

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MSCSM120DUM31CTBL1NG-Module 数据手册

MSCSM120DUM31CTBL1NG

Dual Common Source SiC MOSFET Power Module

Product Overview

The MSCSM120DUM31CTBL1NG device is a 1200 V, 79 A dual common source silicon carbide (SiC) MOSFET

power module.

G1 S1

S1/S2

S2 G2

All ratings at T_J= 25 °C, unless otherwise specified.

Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.

DS00004081A-page 1

Datasheet

and its subsidiaries

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