Datasheet > MSCSM120DAM31CTBL1NG-Module

MSCSM120DAM31CTBL1NG-Module

更新时间： 2023-12-06 20:11:44

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
16页	776K
描述
'? SiC Power MOSFET- Low RDS(on)- High temperature performance? Kelvin source for easy drive? Very

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MSCSM120DAM31CTBL1NG-Module 数据手册

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MSCSM120DAM31CTBL1NG

Features

The following are the key features of MSCSM120DAM31CTBL1NG device:

•

SiC Power MOSFET

– Low R_DS(on)

– High speed switching

•

SiC Schottky Diode

– Zero reverse recovery

– Zero forward recovery

– Temperature independent switching behavior

– Positive temperature coefficient on V_F

•

Very low stray inductance

Ultra-low weight and profile

Kelvin source for easy drive

Si₃N₄substrate with thick copper for improved thermal performance

Internal thermistor for temperature monitoring

Extended temperature range

Benefits

The following are the benefits of MSCSM120DAM31CTBL1NG device:

•

High efficiency converter

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction-to-heatsink thermal resistance

Low profile

RoHS compliant

Solderable terminals both for power and signal for easy PCB mounting

Very integrated power conversion system

Application

The following are the applications of MSCSM120DAM31CTBL1NG device:

•

High reliability power systems

High Efficiency AC/DC and DC/AC converters

Motor control

DS00004079A-page 2

Datasheet

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