Datasheet > MSC010SDA170

MSC010SDA170

更新时间： 2023-12-06 20:00:20

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
8页	1261K
描述
MSC010SDA170 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Microchip's

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MSC010SDA170 数据手册

MSC010SDA170S Zero Recovery Silicon Carbide Schottky Diode

Product Overview

The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the

performance over silicon diode solutions while lowering the total cost of ownership for high-voltage

applications. The MSC010SDA170S device is a 1700 V, 10 A SiC SBD in a TO-268 (D3PAK) package.

Features

The following are key features of the MSC010SDA170S device:

No reverse recovery

Low forward voltage

Low leakage current

Avalanche-energy rated

RoHS compliant

•

Beneﬁts

The following are beneﬁts of the MSC010SDA170S device:

High switching frequency

Low switching losses

Low noise (EMI) switching

Higher reliability systems

Increased system power density

•

Applications

The MSC010SDA170S device is designed for the following applications:

Power factor correction (PFC)

Anti-parallel diode

•

Switch-mode power supply

Inverters/converters

Motor controllers

◦

Freewheeling diode

•

Switch-mode power supply

Inverters/converters

◦

Snubber/clamp diode

053-4124 MSC010SDA170S Datasheet Revision A

12 3 4 5 6 7 8

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