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MSB709-RT1G PDF预览

MSB709-RT1G

更新时间: 2024-11-21 12:36:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 39K
描述
PNP General Purpose Amplifier Transistor Surface Mount

MSB709-RT1G 技术参数

是否无铅:不含铅生命周期:End Of Life
零件包装代码:SC-59包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:5.24
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):210JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MSB709-RT1G 数据手册

 浏览型号MSB709-RT1G的Datasheet PDF文件第2页浏览型号MSB709-RT1G的Datasheet PDF文件第3页浏览型号MSB709-RT1G的Datasheet PDF文件第4页 
MSB709−RT1  
Preferred Device  
PNP General Purpose  
Amplifier Transistor  
Surface Mount  
Features  
http://onsemi.com  
Pb−Free Package is Available  
COLLECTOR  
3
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector − Base Voltage  
Collector − Emitter Voltage  
Emitter − Base Voltage  
Collector Current − Continuous  
Collector Current − Peak  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value  
60  
Unit  
Vdc  
V
(BR)CBO  
(BR)CEO  
(BR)EBO  
2
1
V
V
45  
Vdc  
BASE  
EMITTER  
7.0  
−100  
200  
Vdc  
I
mAdc  
mAdc  
C
MARKING  
DIAGRAM  
I
C(P)  
3
Symbol  
Max  
200  
Unit  
mW  
°C  
SC−59  
CASE 318D  
AR M G  
2
Power Dissipation  
P
D
G
1
Junction Temperature  
T
150  
J
Storage Temperature  
T
stg  
55 ~ +150  
°C  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
AR  
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
June, 2005 − Rev. 6  
MSB709−RT1/D  

MSB709-RT1G 替代型号

型号 品牌 替代类型 描述 数据表
MSB1218A-RT1G ONSEMI

类似代替

PNP Silicon General Purpose Amplifier Transistor
MSB709-RT1 ONSEMI

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PNP General Purpose Amplifier Transistor Surface Mount
MSB1218A-RT1 ONSEMI

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PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

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