Datasheet > MSB710-RT1

MSB710-RT1

更新时间： 2024-11-24 22:39:23

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体放大器晶体管
页数	文件大小	规格书
6页	129K
描述
PNP General Purpose Amplifier Transistors Surface Mount

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中文翻译

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数据手册

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MSB710-RT1 数据手册

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by MSB710–QT1/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

COLLECTOR

CASE 318D–03, STYLE 1

SC–59

BASE

EMITTER

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Value

–60

Unit

Vdc

Collector–Base Voltage

Collector–Emitter Voltage

Emitter–Base Voltage

(BR)CBO

(BR)CEO

–50

Vdc

–7.0

–500

–1.0

Vdc

(BR)EBO

Collector Current — Continuous

Collector Current — Peak

mAdc

Adc

C(P)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C

Power Dissipation

Junction Temperature

Storage Temperature

150

stg

–55 ~ +150

°C

DEVICE MARKING

Marking Symbol

CQ^X

CR^X

MSB710–QT1

MSB710–RT1

The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month

in which the part was manufactured.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

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