Datasheet > MSB710-RT1G

MSB710-RT1G

更新时间： 2024-11-21 12:18:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
2页	38K
描述
PNP General Purpose Amplifier Transistor Surface Mount

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

MSB710-RT1G 数据手册

MSB710−RT1

Preferred Device

PNP General Purpose

Amplifier Transistor

Surface Mount

Features

http://onsemi.com

• Pb−Free Package is Available

COLLECTOR

MAXIMUM RATINGS (T = 25°C)

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Emitter−Base Voltage

Symbol

Value

−60

Unit

Vdc

(BR)CBO

(BR)CEO

(BR)EBO

−50

Vdc

BASE

EMITTER

−7.0

−500

−1.0

Vdc

Collector Current − Continuous

Collector Current − Peak

mAdc

Adc

C(P)

THERMAL CHARACTERISTICS

Characteristic

Power Dissipation

Symbol

Max

200

Unit

°C

SC−59

CASE 318D

Junction Temperature

Storage Temperature

150

stg

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MARKING DIAGRAM

ELECTRICAL CHARACTERISTICS (T = 25°C)

CR M G

Characteristic

Symbol

Min

Max

Unit

Collector−Emitter Breakdown Voltage

Vdc

(I = −10 mAdc, I = 0)

−50

−

(BR)CEO

(BR)CBO

(BR)EBO

CR = Device Code

Collector−Base Breakdown Voltage

(I = −10 mAdc, I = 0)

Vdc

mAdc

−

= Date Code*

−60

−7.0

−

= Pb−Free Package

Emitter−Base Breakdown Voltage

(I = −10 mAdc, I = 0)

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

Collector−Base Cutoff Current

(V = −20 Vdc, I = 0)

CBO

−0.1

DC Current Gain (Note 1)

(V = −10 Vdc, I = −150 mAdc)

ORDERING INFORMATION

FE1

FE2

120

240

−

(V = −10 Vdc, I = 500 mAdc)

†

Device

Package

Shipping

Collector−Emitter Saturation Voltage

(I = −300 mAdc, I = −30 mAdc)

Vdc

MSB710−RT1

MSB710−RT1G

SC−59

3000 / Tape & Reel

−

−0.6

−1.5

CE(sat)

BE(sat)

SC−59

(Pb−Free)

Collector−Base Saturation Voltage

(I = −300 mAdc, I = −30 mAdc)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Output Capacitance

(V = −10 Vdc, I = 0, f = 1.0 MHz)

1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 4

MSB710−RT1/D

中文翻译

下载PDF

MSB710-RT1G 替代型号

型号	品牌	替代类型	描述	数据表
MMBTA55LT1G	ONSEMI	类似代替	Driver Transistors PNP Silicon
MMBTA55	ONSEMI	类似代替	Driver Transistors(PNP Silicon)

与MSB710-RT1G相关器件

型号	品牌	获取价格	描述	数据表
MSB710RT3	MOTOROLA	获取价格	Transistor
MSB710-RT3	ONSEMI	获取价格	500mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN
MSB71D	MICRO-ELECTRONICS	获取价格	Single Color LED, Red, Diffused, 5mm,
MSB71DA	MICRO-ELECTRONICS	获取价格	Single Color LED, Red, Diffused, 5mm,
MSB72D	MICRO-ELECTRONICS	获取价格	Single Color LED, Red, Diffused, 4.95mm
MSB72DA	MICRO-ELECTRONICS	获取价格	Single Color LED, Red, Diffused, 4.95mm,
MSB73D	MICRO-ELECTRONICS	获取价格	RED LED ENCAPSULATED IN A 1mm x 5mm RECTANGULAR BARS PACKAGE
MSB73DA	MICRO-ELECTRONICS	获取价格	ULTRA HIGH BRIGHTNESS RECTANGULAR BAR RED LED LAMP
MSB74D	MICRO-ELECTRONICS	获取价格	1.2mm x 3.4mm RECTANGULAR BAR LED LAMP
MSB74DA	MICRO-ELECTRONICS	获取价格	Single Color LED, Red, Diffused, 3.4mm,

与MSB710-RT1G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

28
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

21
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

50
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

48

产品中心

服务支持

精选活动

关于我们

帮助中心

MSB710-RT1G

MSB710-RT1G 数据手册

MSB710-RT1G 替代型号

与MSB710-RT1G相关器件

与MSB710-RT1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MSB710-RT1G

MSB710-RT1G 数据手册

MSB710-RT1G 替代型号

与MSB710-RT1G相关器件

与MSB710-RT1G相关文章

您还可以找

您在本页遇到什么问题？