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MSB710-QT1 PDF预览

MSB710-QT1

更新时间: 2024-11-20 22:39:23
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体放大器小信号双极晶体管光电二极管
页数 文件大小 规格书
6页 129K
描述
PNP General Purpose Amplifier Transistors Surface Mount

MSB710-QT1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.85Is Samacsys:N
最大集电极电流 (IC):0.5 A基于收集器的最大容量:15 pF
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
VCEsat-Max:0.6 VBase Number Matches:1

MSB710-QT1 数据手册

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Order this document  
by MSB710–QT1/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
COLLECTOR  
3
3
2
1
2
1
CASE 318D–03, STYLE 1  
SC–59  
BASE  
EMITTER  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Value  
60  
Unit  
Vdc  
Collector–Base Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
(BR)CBO  
(BR)CEO  
V
50  
Vdc  
V
7.0  
500  
–1.0  
Vdc  
(BR)EBO  
Collector Current — Continuous  
Collector Current — Peak  
I
C
mAdc  
Adc  
I
C(P)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
mW  
°C  
Power Dissipation  
P
D
Junction Temperature  
Storage Temperature  
T
J
150  
T
stg  
55 ~ +150  
°C  
DEVICE MARKING  
Marking Symbol  
CQX  
CRX  
MSB710–QT1  
MSB710–RT1  
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month  
in which the part was manufactured.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1996  

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