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MSB710-RT1 PDF预览

MSB710-RT1

更新时间: 2024-11-24 22:39:23
品牌 Logo 应用领域
乐山 - LRC 晶体放大器晶体管
页数 文件大小 规格书
1页 40K
描述
PNP General Purpose Amplifier Transistor Surface Mount

MSB710-RT1 数据手册

  
LESHAN RADIO COMPANY, LTD.  
PNP General Purpose Amplifier  
Transistor Surface Mount  
MSB710-RT1  
COLLECTOR  
3
3
2
1
CASE 318D–04, STYLE1  
SC–59  
2
1
BASE  
EMITTER  
MAXIMUM RATINGS (TA = 25°C)  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V (BR)CBO  
V(BR)CEO  
V (BR)EBO  
IC  
–60  
–50  
–7.0  
–500  
–1.0  
Collector Current - Continuous  
Collector Current - Peak  
THERMAL CHARACTERISTICS  
Characteristic  
mAdc  
Adc  
I C(P)  
Symbol  
PD  
Max  
200  
Unit  
mW  
°C  
Power Dissipation  
Junction Temperature  
Storage Temperature  
T J  
150  
Tstg  
–55 ~ +150  
°C  
DEVICE MARKING  
X
CR  
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month  
in which the part was manufactured.  
N3–1/1  

MSB710-RT1 替代型号

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