Datasheet > MRF6VP41KHSR6

MRF6VP41KHSR6

更新时间： 2024-11-12 04:14:39

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飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6VP41KHSR6 数据手册

Document Number: MRF6VP41KH

Rev. 0, 1/2008

Freescale Semiconductor

‘

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF6VP41KHR6

MRF6VP41KHSR6

Designed primarily for pulsed wideband applications with frequencies up to

450 MHz. Devices are unmatched and are suitable for use in industrial,

medical and scientific applications.

• Typical Pulsed Performance at 450 MHz: V_DD= 50 Volts, I_DQ= 150 mA,

_out= 1000 Watts Peak, Pulse Width = 100 μsec, Duty Cycle = 20%

10-450 MHz, 1000 W, 50 V

LATERAL N-CHANNEL

BROADBAND

Power Gain — 20 dB

Drain Efficiency — 64%

• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak

RF POWER MOSFETs

Power

Features

• Qualified Up to a Maximum of 50 V_DDOperation

• Integrated ESD Protection

• Excellent Thermal Stability

• Designed for Push-Pull Operation

• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

CASE 375D-05, STYLE 1

NI-1230

MRF6VP41KHR6

CASE 375E-04, STYLE 1

NI-1230S

MRF6VP41KHSR6

PARTS ARE PUSH-PULL

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

(Top View)

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +110

-6, +10

- 65 to +150

150

Unit

Drain-Source Voltage

Vdc

°C

DSS

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

200

°C

MRF6VP41KHR6 MRF6VP41KHSR6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...13

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