Datasheet > MRF7S15100HR3_09

MRF7S15100HR3_09

更新时间： 2024-11-12 05:50:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
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描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF7S15100HR3_09 数据手册

Document Number: MRF7S15100H

Rev. 2, 6/2009

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 1470 to

1510 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulations.

MRF7S15100HR3

MRF7S15100HSR3

• Typical Single-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ

600 mA, P_out= 23 Watts Avg., f = 1507.5 MHz, IQ Magnitude Clipping,

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF.

1470-1510 MHz, 23 W AVG., 28 V

SINGLE W-CDMA

Power Gain — 19.5 dB

Drain Efficiency — 32%

Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset — -38 dBc in 3.84 MHz Channel Bandwidth

LATERAL N-CHANNEL

RF POWER MOSFETs

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW

Output Power

• Typical P_out@ 1 dB Compression Point ' 100 Watts CW

Features

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

CASE 465-06, STYLE 1

NI-780

MRF7S1500HR3

• Integrated ESD Protection

• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

• Optimized for Doherty Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF7S1500HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +65

-6.0, +10

32, +0

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Operating Voltage

DSS

Storage Temperature Range

Case Operating Temperature

stg

- 65 to +150

150

°C

(1,2)

Operating Junction Temperature

225

°C

CW Operation @ T = 25°C

Derate above 25°C

0.36

W/°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 55 W CW

Case Temperature 77°C, 23 W CW

°C/W

0.65

0.74

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF7S15100HR3 MRF7S15100HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...13

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与MRF7S15100HR3_09相关器件

型号	品牌	获取价格	描述	数据表
MRF7S15100HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S15100HSR3	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
MRF7S16150HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S16150HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S18125AHR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF7S18125AHSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF7S18125BHR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF7S18125BHSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF7S18170H	FREESCALE	获取价格	RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
MRF7S18170HR3	FREESCALE	获取价格	RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

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