Datasheet > MRF7S15100HSR3

MRF7S15100HSR3

更新时间： 2024-11-12 04:14:39

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飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF7S15100HSR3 数据手册

Document Number: MRF7S15100H

Rev. 0, 7/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF7S15100HR3

MRF7S15100HSR3

Designed for CDMA base station applications with frequencies from 1470 to

1510 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL

applications.

• Typical Single-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ

600 mA, P_out= 23 Watts Avg., f = 1507.5 MHz, 3GPP Test Model 1,

1510 MHz, 23 W AVG., 28 V

SINGLE W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal

PAR = 7.5 dB @ 0.01% Probability on CCDF.

Power Gain — 19.5 dB

Drain Efficiency — 32%

Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset — -38 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW

Output Power

• Typical P_out@ 1 dB Compression Point ' 100 Watts CW

Features

CASE 465-06, STYLE 1

NI-780

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

MRF7S1500HR3

• Integrated ESD Protection

• Greater Negative Gate-Source Voltage Range for Improved Class C

Operation

• Optimized for Doherty Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF7S1500HSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +65

-6.0, +10

32, +0

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Operating Voltage

DSS

Storage Temperature Range

Case Operating Temperature

stg

- 65 to +150

150

°C

(1)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 55 W CW

Case Temperature 77°C, 23 W CW

°C/W

0.65

0.74

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF7S15100HR3 MRF7S15100HSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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