Datasheet > MRF7S18125AHSR3

MRF7S18125AHSR3

更新时间： 2024-11-12 05:50:11

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RF Power Field Effect Transistors

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MRF7S18125AHSR3 数据手册

Document Number: MRF7S18125AH

Rev. 0, 11/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with

frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for

all typical cellular base station modulations.

MRF7S18125AHR3

MRF7S18125AHSR3

GSM Application

• Typical GSM Performance: V_DD= 28 Volts, I_DQ= 1100 mA, P_out

125 Watts CW, f = 1880 MHz.

1805-1880 MHz, 125 W CW, 28 V

GSM, GSM EDGE

Power Gain — 17 dB

LATERAL N-CHANNEL

RF POWER MOSFETs

Drain Efficiency — 55%

GSM EDGE Application

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 1100 mA,

P_out= 57 Watts Avg., Full Frequency Band (1805-1880 MHz).

Power Gain — 17 dB

Drain Efficiency — 38%

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -75 dBc

EVM — 1.75% rms

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1840 MHz, 125 Watts CW

CASE 465-06, STYLE 1

NI-780

Output Power

MRF7S18125AHR3

• Typical P_out@ 1 dB Compression Point ] 140 Watts CW

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

CASE 465A-06, STYLE 1

NI-780S

MRF7S18125AHSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +65

-6.0, +10

32, +0

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Operating Voltage

DSS

Storage Temperature Range

Case Operating Temperature

stg

- 65 to +150

150

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 125 W CW

Case Temperature 80°C, 71 W CW

°C/W

0.31

0.34

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF7S18125AHR3 MRF7S18125AHSR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...14

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与MRF7S18125AHSR3相关器件

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