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MRF7P20040HR5

更新时间： 2024-11-12 21:13:39
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 483K
描述
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-262A2

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MRF7P20040HR5 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ActiveReach Compliance Code：unknown
风险等级：5.76Base Number Matches：1

MRF7P20040HR5 数据手册

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Document Number: MRF7P20040H  
Rev. 2, 12/2010  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
MRF7P20040HR3  
MRF7P20040HSR3  
Designed for CDMA base station applications with frequencies from 1800 to  
2200 MHz. Can be used in Class AB and Class C for all typical cellular base  
station modulation formats.  
•
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 32 Volts,  
I
DQA = 150 mA, VGSB = 1.5 Vdc, Pout = 10 Watts Avg., IQ Magnitude  
2010--2025 MHz, 10 W AVG., 32 V  
SINGLE W--CDMA  
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @  
0.01% Probability  
on CCDF.  
LATERAL N--CHANNEL  
RF POWER MOSFETs  
G
(dB)  
η
(%)  
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
Frequency  
2025 MHz  
18.2  
42.6  
7.3  
--34.8  
•
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW (1)  
Output Power (3 dB Input Overdrive from Rated Pout  
Typical Pout @ 3 dB Compression Point ≃ 50 Watts CW (1)  
)
Features  
CASE 465M--01, STYLE 1  
N I -- 7 8 0 -- 4  
•
•
•
Production Tested in a Symmetrical Doherty Configuration  
MRF7P20040HR3  
100% PAR Tested for Guaranteed Output Power Capability  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
and Common Source S--Parameters  
•
•
•
Internally Matched for Ease of Use  
Integrated ESD Protection  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
CASE 465H--02, STYLE 1  
NI--780S--4  
•
•
•
Designed for Digital Predistortion Error Correction Systems  
RoHS Compliant  
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.  
For R5 Tape and Reel option, see p. 15.  
MRF7P20040HSR3  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
--0.5, +65  
--6.0, +10  
32, +0  
Unit  
Vdc  
Vdc  
Vdc  
°C  
RF /V  
RF /V  
outA DSA  
3
4
1
2
Drain--Source Voltage  
Gate--Source Voltage  
V
inA GSA  
DSS  
V
V
GS  
DD  
Operating Voltage  
RF /V  
inB GSB  
RF /V  
outB DSB  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
stg  
-- 65 to +150  
150  
T
C
°C  
(Top View)  
(2,3)  
T
J
225  
°C  
CW Operation @ T = 25°C  
Derate above 25°C  
CW  
42.4  
0.17  
W
W/°C  
Figure 1. Pin Connections  
C
Table 2. Thermal Characteristics  
(3,4)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
°C/W  
JC  
Case Temperature 78°C, 10 W CW, 32 Vdc, I  
Case Temperature 82°C, 40 W CW , 32 Vdc, I  
= 150 mA, V  
= 1.5 Vdc, 2017.5 MHz  
GSB  
2.11  
1.50  
DQA  
(1)  
= 150 mA, V  
= 1.5 Vdc, 2017.5 MHz  
DQA  
GSB  
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.  
2. Continuous use at maximum temperature will affect MTTF.  
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/-  
Application Notes -- AN1955.  
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.  
1234567...16

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