Datasheet > MRF5S19060NR1_08

MRF5S19060NR1_08

更新时间： 2024-01-26 05:22:25

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
16页	595K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF5S19060NR1_08 数据手册

Document Number: MRF5S19060N

Rev. 7, 10/2008

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

MRF5S19060NR1

MRF5S19060NBR1

Designed for broadband commercial and industrial applications with

frequencies from 1930 to 1990 MHz. The high gain and broadband

performance of these devices make them ideal for large-signal, common-

source amplifier applications in 28 Volt base station equipment.

• Typical 2-carrier N-CDMA Performance: V_DD= 28 Volts, I_DQ= 750 mA,

P_out= 12 Watts Avg., 1990 MHz, IS-95 (Pilot, Sync, Paging, Traffic Codes

8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%

Probability on CCDF.

1930-1990 MHz, 12 W AVG., 28 V

2 x N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

Power Gain — 14 dB

Drain Efficiency — 23%

IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Channel Bandwidth

ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Channel Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 12 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF5S19060NR1

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF5S19060NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +65

-0.5, +15

Total Device Dissipation @ T = 25°C

Derate above 25°C

218.8

1.25

W/°C

Storage Temperature Range

Operating Junction Temperature

- 65 to +175

200

°C

stg

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 75°C, 12 W CW

0.80

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF5S19060NR1 MRF5S19060NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...16

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与MRF5S19060NR1_08相关器件

型号	品牌	获取价格	描述	数据表
MRF5S19090HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19090HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19090LR3	MOTOROLA	获取价格	1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S19090LSR3	MOTOROLA	获取价格	1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S19100HD	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MO
MRF5S19100HR3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MO
MRF5S19100HR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19100HSR3	FREESCALE	获取价格	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19100HSR3	MOTOROLA	获取价格	The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MO
MRF5S19100LSR3	MOTOROLA	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-780S, CASE 465A-06, 2 PIN

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