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MPSW55RLRAG PDF预览

MPSW55RLRAG

更新时间: 2024-11-09 10:48:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
4页 93K
描述
One Watt Amplifier Transistors

MPSW55RLRAG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:LEAD FREE, CASE 29-10, TO-92, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.31最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-226
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

MPSW55RLRAG 数据手册

 浏览型号MPSW55RLRAG的Datasheet PDF文件第2页浏览型号MPSW55RLRAG的Datasheet PDF文件第3页浏览型号MPSW55RLRAG的Datasheet PDF文件第4页 
MPSW55, MPSW56  
One Watt Amplifier  
Transistors  
PNP Silicon  
http://onsemi.com  
Features  
PbFree Packages are Available*  
COLLECTOR  
3
2
MAXIMUM RATINGS  
BASE  
Rating  
Symbol  
Value  
Unit  
1
EMITTER  
CollectorEmitter Voltage  
MPSW55  
MPSW56  
V
CEO  
V
CBO  
V
EBO  
60  
80  
Vdc  
CollectorBase Voltage  
MPSW55  
MPSW56  
60  
80  
Vdc  
EmitterBase Voltage  
4.0  
Vdc  
Collector Current Continuous  
I
500  
mAdc  
TO92 1 WATT  
(TO226)  
CASE 2910  
STYLE 1  
C
Total Device Dissipation @ T = 25°C  
P
1.0  
8.0  
W
mW/°C  
A
D
1
2
3
BENT LEAD  
TAPE & REEL  
AMMO PACK  
Derate above 25°C  
1
2
3
Total Device Dissipation @ T = 25°C  
P
2.5  
20  
W
mW/°C  
C
D
STRAIGHT LEAD  
BULK PACK  
Derate above 25°C  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Characteristic  
MPS  
W5x  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
AYWWG  
Thermal Resistance, JunctiontoAmbient  
Thermal Resistance, JunctiontoCase  
R
q
JA  
G
R
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
x
A
Y
= 5 or 6  
= Assembly Location  
= Year  
WW = Work Week  
G
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MPSW55G  
TO92  
(PbFree)  
5000 Units/Bulk  
MPSW55RLRAG  
TO92  
(PbFree)  
2000/Tape & Reel  
MPSW56RLRP  
TO92  
2000/Ammo Pack  
2000/Ammo Pack  
MPSW56RLRPG  
TO92  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
August, 2010 Rev. 4  
MPSW55/D  

MPSW55RLRAG 替代型号

型号 品牌 替代类型 描述 数据表
MPSW55RLRA ONSEMI

完全替代

500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
MPSW55G ONSEMI

类似代替

One Watt Amplifier Transistors
MPSW55 ONSEMI

类似代替

One Watt Amplifier Transistors(PNP Silicon)

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MPSW55RLRB MOTOROLA

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MPSW55RLRE ONSEMI

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500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
MPSW55RLRF MOTOROLA

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MPSW55RLRM MOTOROLA

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500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW55RLRM ONSEMI

获取价格

500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
MPSW55RLRP MOTOROLA

获取价格

500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW55RLRP ONSEMI

获取价格

500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
MPSW55ZL1 ONSEMI

获取价格

500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN
MPSW55ZL1 MOTOROLA

获取价格

500mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSW56 FAIRCHILD

获取价格

PNP General Purpose Amplifier