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MPSA93TRALEADFREE PDF预览

MPSA93TRALEADFREE

更新时间: 2024-09-09 14:35:07
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
3页 515K
描述
Transistor

MPSA93TRALEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):0.5 A
配置:Single最小直流电流增益 (hFE):25
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.625 W子类别:Other Transistors
表面贴装:NO标称过渡频率 (fT):50 MHz
Base Number Matches:1

MPSA93TRALEADFREE 数据手册

 浏览型号MPSA93TRALEADFREE的Datasheet PDF文件第2页浏览型号MPSA93TRALEADFREE的Datasheet PDF文件第3页 
MPSA92  
MPSA93  
www.centralsemi.com  
SILICON  
HIGH VOLTAGE  
PNP TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MPSA92 and  
MPSA93 are silicon PNP transistors designed for  
high voltage applications.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
MPSA92  
300  
MPSA93  
200  
UNITS  
V
A
V
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
300  
200  
V
V
5.0  
500  
625  
Continuous Collector Current  
Power Dissipation  
I
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
200  
J
stg  
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
MPSA92  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=200V  
=160V  
=3.0V  
-
250  
-
-
nA  
CBO  
CEO  
EBO  
CB  
CE  
EB  
-
-
-
-
-
250  
nA  
nA  
V
100  
100  
BV  
BV  
BV  
I =100μA  
300  
300  
5.0  
-
-
200  
200  
5.0  
-
-
CBO  
CEO  
EBO  
C
I =1.0mA  
-
-
V
C
I =100μA  
-
0.5  
0.9  
-
-
0.4  
0.9  
-
V
E
V
V
I =20mA, I =2.0mA  
V
CE(SAT)  
BE(SAT)  
FE  
C
B
I =20mA, I =2.0mA  
-
-
V
C
B
h
h
h
V
=10V, I =1.0mA  
25  
40  
25  
50  
-
25  
40  
25  
50  
-
CE  
CE  
CE  
CE  
CB  
C
V
V
V
V
=10V, I =10mA  
-
-
FE  
C
=10V, I =30mA  
-
-
FE  
C
f
=20V, I =10mA, f=100MHz  
-
-
MHz  
pF  
T
C
C
=20V, I =0, f=1.0MHz  
6.0  
8.0  
ob  
E
R1 (8-November 2013)  

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