MMFTP3327SK
P-Channel Enhancement Mode MOSFET
Features
Drain
• Surface-mounted package
• Advanced trench cell design
• Built-in G-S Protection Diode
• Typical ESD Protection HBM Class 2
Gate
Classification
Voltage Range(V)
1. Gate 2. Source 3. Drain
SOT-23 Plastic Package
0A
0B
1A
1B
1C
2
< 125
Source
125 to < 250
250 to < 500
500 to < 1000
1000 to < 2000
2000 to < 4000
4000 to < 8000
≥ 8000
3A
3B
Applications
• Portable appliances
• Battery management
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
Value
Unit
V
-VDS
VGS
-ID
20
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
± 12
V
3.9
A
Peak Drain Current, Pulsed 1)
Power Dissipation 2)
-IDM
PD
7.8
A
1
W
W
℃
Power Dissipation 2)
t = 10 s
PD
2
Operating Junction and Storage Temperature Range
Tj, Tstg
- 55 to + 150
Thermal Resistance Ratings
Parameter
Symbol
RθJA
Max.
125
Unit
℃/W
℃/W
Thermal Resistance from Junction to Ambient 2)
Thermal Resistance from Junction to Ambient 2) t = 10 s
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
RθJA
62.5
2) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
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Dated: 26/05/2023 Z Rev:03