Datasheet > MMDT1P434

MMDT1P434

更新时间： 2024-09-09 05:49:23

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
1页	126K
描述
PNP Silicon Epitaxial Planar Transistor

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MMDT1P434 数据手册

MMDT1P434

PNP Silicon Epitaxial Planar Transistor

for switching and interface circuit and drive circuit

applications

Collector

(Output)

Features

Base

(Input)

• With built-in bias resistors

• Simplify circuit design

• Reduce a quantity of parts and

manufacturing process

Emitter

(Common)

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-V_CBO

-V_CEO

-V_EBO

-I_C

100

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

h_FE

-I_CBO

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 5 V, -I_C= 5 mA

Collector Base Cutoff Current

at -V_CB= 50 V

Collector Emitter Breakdown Voltage

at -I_C= 100 µA

Collector Emitter Saturation Voltage

at -I_C= 10 mA, -I_B= 0.5 mA

Input On Voltage

0.1

µA

-V_(BR)CEO

-V_CE(sat)

-V_I(on)

0.3

1.7

at -V_CE= 0.2 V, -I_C= 5 mA

Input Off Voltage

-V_I(off)

0.5

at -V_CE= 5 V, -I_C= 100 µA

Input Resistor

Resistance Ratio

R₁

R₂

3.29

15.4

3.6

4.7

6.11

28.6

5.5

KΩ

R₂/ R₁

4.5

Transition Frequency

at -V_CE= 10 V, I_E= 5 mA, f = 100 MHz

f_T

250

MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 14/01/2008

中文翻译

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