Datasheet > MMDT1P141

MMDT1P141

更新时间： 2024-09-10 14:55:27

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
4页	810K
描述
数字三极管

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数据手册

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MMDT1P141 数据手册

MMDT1P141

PNP Silicon Epitaxial Planar Digital Transistor

Collector

(Output)

Features

• With built-in bias resistors,

Base

(Input)

R1 = R2 = 10 KΩ

1. Base 2. Emitter 3. Collector

SOT-23 Plastic Package

Emitter

(Common)

Absolute Maximum Ratings (T_a= 25

Parameter

)

Symbol

-V_CEO

-V_CBO

V_EBO

-I_C

Value

Unit

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current

- 40 to + 10

Peak Collector Current

Total Power Dissipation

-I_CM

100

P_tot

200

Junction Temperature

T_j

150

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

625

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 4

Dated: 20/04/2022 Rev: 01

12 3 4

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