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MMD70R900QRH PDF预览

MMD70R900QRH

更新时间: 2024-11-02 17:15:27
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
10页 1321K
描述
DPAK

MMD70R900QRH 数据手册

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MMD70R900Q Datasheet  
MMD70R900Q  
700V 0.9Ω N-channel MOSFET  
Description  
MMD70R900Q is power MOSFET using Magnachips advanced super junction technology that  
can realize very low on-resistance and gate charge. It will provide much high efficiency by using  
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to  
designers as well as low switching loss.  
Key Parameters  
Package & Internal Circuit  
D
Parameter  
VDS @ Tj,max  
RDS(on),max  
VTH,typ  
Value  
Unit  
V
D
750  
0.9  
3
V
G
ID  
5
A
G
S
Qg,typ  
11  
nC  
S
Features  
Low Power Loss by High Speed Switching and Low On-Resistance  
Excellent ESD robustness  
100% Avalanche Tested  
Green Package Pb Free Plating, Halogen Free  
Product validation acc. JEDEC Standard  
Applications  
PFC Power Supply Stages  
Switching Applications  
Adapter  
Ordering Information  
Temp.  
Range  
Order Code  
Marking  
Package  
Packing  
RoHS Status  
MMD70R900QRH  
70R900Q  
-55 ~ 150oC  
TO-252(2L)  
Reel  
Compliant  
Jun.2021. Revision1.3  
1
Magnachip Semiconductor Ltd.  

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