Datasheet > MMD70R900QRH

MMD70R900QRH

更新时间： 2024-11-19 17:15:27

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1321K
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MMD70R900QRH 数据手册

MMD70R900Q Datasheet

MMD70R900Q

700V 0.9Ω N-channel MOSFET

 Description

MMD70R900Q is power MOSFET using Magnachip’s advanced super junction technology that

can realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_TH,typ

Value

Unit

750

0.9

Ω

I_D

Q_g,typ

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 Excellent ESD robustness

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Product validation acc. JEDEC Standard

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Ordering Information

Temp.

Range

Order Code

Marking

Package

Packing

RoHS Status

MMD70R900QRH

70R900Q

-55 ~ 150^oC

TO-252(2L)

Reel

Compliant

Jun.2021. Revision1.3

Magnachip Semiconductor Ltd.

12 3 4 5 6 7...10

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