Datasheet > MMD80R1K2P

MMD80R1K2P

更新时间： 2024-11-02 01:16:47

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1330K
描述
800V 1.2(ohm) N-channel MOSFET

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MMD80R1K2P 数据手册

MMD80R1K2P Final Datasheet

MMD80R1K2P

800V 1.2Ω N-channel MOSFET

 Description

MMD80R1K2P is power MOSFET using magnachip’s advanced super junction technology that

can realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_TH,typ

Value

Unit

850

1.2

Ω

I_D

4.5

15.2

Q_g,typ

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Motor Control

 DC – DC Converters

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMD80R1K2PRH

80R1K2P

-55 ~ 150℃

TO-252

Reel & Tape

Halogen Free

Dec. 2015 Revision 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7...10

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