Datasheet > MMD80R900PRH

MMD80R900PRH

更新时间： 2024-11-02 01:16:47

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1335K
描述
800V 0.9(ohm) N-channel MOSFET

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MMD80R900PRH 数据手册

MMD80R900P Datasheet

MMD80R900P

800V 0.9Ω N-channel MOSFET

 Description

MMD80R900P is power MOSFET using magnachip’s advanced super junction technology that can

realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_TH,typ

Value

Unit

850

0.9

Ω

I_D

Q_g,typ

17.6

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Motor Control

 DC – DC Converters

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

TO-252

(D-PAK)

MMD80R900PRH

80R900P

-55 ~ 150℃

Reel & Tape

Halogen Free

Jan. 2015 Revision 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7...10

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