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MMD80R1K2QZRH PDF预览

MMD80R1K2QZRH

更新时间: 2024-11-18 17:15:39
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
10页 1312K
描述
DPAK

MMD80R1K2QZRH 数据手册

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MMD80R1K2QZ Datasheet  
MMD80R1K2QZ  
800V 1.2Ω N-channel MOSFET  
Description  
MMD80R1K2QZ is power MOSFET using Magnachips advanced super junction technology that  
can realize very low on-resistance and gate charge. It will provide much high efficiency by using  
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to  
designers as well as low switching loss.  
Key Parameters  
Package & Internal Circuit  
Parameter  
VDS @ Tj,max  
RDS(on),max  
VGS(th),typ  
ID  
Value  
Unit  
V
D
850  
1.2  
3.5  
4.5  
11  
V
A
G
Qg,typ  
nC  
S
Features  
Low Power Loss by High Speed Switching and Low On-Resistance  
Excellent ESD robustness  
100% Avalanche Tested  
Green Package Pb Free Plating, Halogen Free  
Applications  
PFC Power Supply Stages  
Switching Applications  
Adapter  
Ordering Information  
Order Code  
Marking  
Temp. Range  
Package  
Packing  
RoHS Status  
MMD80R1K2QZRH 80R1K2QZ  
-55 ~ 150 oC  
TO-252(2L)  
Reel  
Compliant  
1
Jun. 2023. Revision 1.3  
Magnachip Semiconductor Ltd.  

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