Datasheet > MMD80R900QZRH

MMD80R900QZRH

更新时间： 2024-11-02 17:15:51

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1333K
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MMD80R900QZRH 数据手册

MMD80R900QZ Datasheet

MMD80R900QZ

800V 0.90Ω N-channel MOSFET

 Description

MMD80R900QZ is power MOSFET using Magnachip’s advanced super junction technology that

can realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_GS(th),typ

I_D

Value

Unit

850

0.90

3.5

Ω

Q_g,typ

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 Excellent ESD robustness

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMD80R900QZRH 80R900QZ

-55 ~ 150 ^oC

TO-252(2L)

Reel

Compliant

Jun. 2023. Revision 1.4

Magnachip Semiconductor Ltd.

12 3 4 5 6 7...10

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