Silicon Step Recovery Diodes
MMDx & SMMDx Series
Rev. V5
Features
•
•
•
Output Combs to 40+ GHz
Transition Times down to 35 ps
Screening per MIL-PRF-19500 and MIL-PRF-
38534 available
Plastic SMT w/leads
Description
The diodes feature fully passivated, true mesa
construction for sharp transitions and improved
stability. The beam lead SRDs have the industry’s
fastest transition times for millimeter wave
multiplication and picoseconds pulse forming.
Chip & Beam Lead Electrical Specifications: TA = 25°C
Voltage
Breakdown
(VB)
Junction
Capacitance
(CJ)
Transition
Time
Frequency
Theta
Lifetime
(t)
Cutoff
(θJC)
(tt)
(FCO)
Model
V
pF
ns
ps
GHz
Typ.
°C/W
Max.
Min.
Min.
Max.
Min.
Typ.
Typ.
Max.
Chip
MMD805-C12
MMD810-C12
MMD820-C12
MMD830-C11
MMD832-C11
MMD835-C11
MMD837-C11
MMD840-C11
Beam Lead
60
50
40
25
20
15
20
15
2.5
3.5
80
40
30
15
10
10
5
100
70
60
30
15
20
10
15
250
200
80
300
250
100
80
130
200
390
700
660
800
1300
880
15
22
25
45
50
60
60
60
1.5
1.0
0.5
0.4
0.3
0.2
0.2
2.5
1.7
1.0
0.8
0.7
0.4
0.4
60
60
80
60
70
60
70
7
60
70
MMDB30-B11
MMDB35-B11
MMDB45-B11
14
16
25
0.15
0.13
0.11
0.25
0.20
0.20
1
1
3
4
4
8
30
35
45
38
45
58
530
482
410
600
600
600
Test Conditions:
VB: IR = 10 µA
CJ: VR = 6 V, 1 MHz
t: IF = 10 mA, IR = 6 mA @ 50% Recovery
tt: for Chip: IF = 10 mA, VR = 10 V
tt: for Beam Lead: IF = 3 mA, VR = 7 V
FCO: 1/2πRS
1
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DC-0012557