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MMD805-C12 PDF预览

MMD805-C12

更新时间: 2024-11-02 14:48:23
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
11页 685K
描述
Silicon Step Recovery Diodes

MMD805-C12 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.74最小击穿电压:60 V
配置:SINGLE最大二极管电容:3.5 pF
最小二极管电容:2.5 pF二极管元件材料:SILICON
二极管类型:STEP RECOVERY DIODEJESD-30 代码:S-XUUC-N1
元件数量:1端子数量:1
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MMD805-C12 数据手册

 浏览型号MMD805-C12的Datasheet PDF文件第2页浏览型号MMD805-C12的Datasheet PDF文件第3页浏览型号MMD805-C12的Datasheet PDF文件第4页浏览型号MMD805-C12的Datasheet PDF文件第5页浏览型号MMD805-C12的Datasheet PDF文件第6页浏览型号MMD805-C12的Datasheet PDF文件第7页 
Silicon Step Recovery Diodes  
MMDx & SMMDx Series  
Rev. V5  
Features  
Output Combs to 40+ GHz  
Transition Times down to 35 ps  
Screening per MIL-PRF-19500 and MIL-PRF-  
38534 available  
Plastic SMT w/leads  
Description  
The diodes feature fully passivated, true mesa  
construction for sharp transitions and improved  
stability. The beam lead SRDs have the industrys  
fastest transition times for millimeter wave  
multiplication and picoseconds pulse forming.  
Chip & Beam Lead Electrical Specifications: TA = 25°C  
Voltage  
Breakdown  
(VB)  
Junction  
Capacitance  
(CJ)  
Transition  
Time  
Frequency  
Theta  
Lifetime  
(t)  
Cutoff  
(θJC)  
(tt)  
(FCO)  
Model  
V
pF  
ns  
ps  
GHz  
Typ.  
°C/W  
Max.  
Min.  
Min.  
Max.  
Min.  
Typ.  
Typ.  
Max.  
Chip  
MMD805-C12  
MMD810-C12  
MMD820-C12  
MMD830-C11  
MMD832-C11  
MMD835-C11  
MMD837-C11  
MMD840-C11  
Beam Lead  
60  
50  
40  
25  
20  
15  
20  
15  
2.5  
3.5  
80  
40  
30  
15  
10  
10  
5
100  
70  
60  
30  
15  
20  
10  
15  
250  
200  
80  
300  
250  
100  
80  
130  
200  
390  
700  
660  
800  
1300  
880  
15  
22  
25  
45  
50  
60  
60  
60  
1.5  
1.0  
0.5  
0.4  
0.3  
0.2  
0.2  
2.5  
1.7  
1.0  
0.8  
0.7  
0.4  
0.4  
60  
60  
80  
60  
70  
60  
70  
7
60  
70  
MMDB30-B11  
MMDB35-B11  
MMDB45-B11  
14  
16  
25  
0.15  
0.13  
0.11  
0.25  
0.20  
0.20  
1
1
3
4
4
8
30  
35  
45  
38  
45  
58  
530  
482  
410  
600  
600  
600  
Test Conditions:  
VB: IR = 10 µA  
CJ: VR = 6 V, 1 MHz  
t: IF = 10 mA, IR = 6 mA @ 50% Recovery  
tt: for Chip: IF = 10 mA, VR = 10 V  
tt: for Beam Lead: IF = 3 mA, VR = 7 V  
FCO: 1/2πRS  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  
DC-0012557  

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