Datasheet > MMD60R175S6ZRH

MMD60R175S6ZRH

更新时间： 2024-09-16 17:15:19

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	847K
描述
DPAK

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MMD60R175S6ZRH 数据手册

MMD60R175S6Z Datasheet

MMD60R175S6Z

600V 0.175Ω N-channel MOSFET

 Description

Superior 6^thgeneration SJ MOSFETs (S6-series) are cutting-edge high voltage power MOSFETs,

based on Magnachip’s extensive design expertise and years of experience. The main strengths of S6-

series are low on-resistance, low gate charge and reduced tendency for ringing. As a result, its

switching loss is very low, making it optimized for switching applications. Moreover, these user friendly

devices offer the advantages of improved ruggedness and remarkable ESD capability by integrated

zener diode, making it an ideal choice for designers.

 Key parameters

 Package & internal circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_TH,typ

Value

Unit

650

0.175

3.5

Ω

I_D

Q_g,typ

28.6

 Features

 Low power loss by high speed switching and low on-resistance

 100% avalanche tested

 Green package – Pb free plating, halogen free

 Zener-integrated

 Applications

 PFC power supply stages

 Switching applications

 Adapter



DC-DC converters

 Ordering Information

Order Code

Marking

60R175S6Z

Temp. Range

-55 ~ 150^oC

Package

Packing

RoHS Status

MMD60R175S6ZRH

TO-252

Reel

Compliant

Nov. 2023. Revision 1.3

Magnachip Semiconductor Ltd.

12 3 4 5 6 7...10

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