Datasheet > MMD60R400RFZRH

MMD60R400RFZRH

更新时间： 2024-09-16 17:15:39

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	762K
描述
TO-252

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MMD60R400RFZRH 数据手册

MMD60R400RFZ Datasheet

MMD60R400RFZ

600V 0.40Ω N-channel MOSFET

 Description

MMD60R400RFZ is power MOSFET using Magnachip’s advanced super junction technology that

can realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_TH,typ

Value

Unit

650

0.40

4.0

Ω

I_D

11.0

18.4

Q_g,typ

 Features

 Ultra-fast Body Diode

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Zener - Integrated

 Applications

 Soft-switching Applications

 Motor drive

 Adapters

 Lighting

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMD60R400RFZRH

60R400RFZ

-55 ~ 150^oC

TO-252

Reel

Compliant

Dec. 2022 Revision 1.0

Magnachip Semiconductor Ltd.

12 3 4 5 6 7...10

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