Datasheet > MMD65R900QRH

MMD65R900QRH

更新时间： 2024-09-16 17:15:27

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1512K
描述
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MMD65R900QRH 数据手册

MMD65R900Q Datasheet

MMD65R900Q

650V 0.90Ω N-channel MOSFET

 Description

MMD65R900Q is power MOSFET using Magnachip’s advanced super junction technology that

can realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_{j, max}

R_{DS(on), max}

V_{GS(th), typ}

I_D

Value

Unit

700

0.90

Ω

4.7

11.1

Q_{g, typ}

 Features

 Low power loss by high speed switching and low on-resistance

 100% avalanche tested

 Green package – Pb-free plating, Halogen-free

 Applications

 PFC power supply stages

 Switching applications

 Adapter

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMD65R900QRH

65R900Q

-55 ~ 150^oC

TO-252

Reel

compliant

May. 2021. Revision 1.2

Magnachip Semiconductor Ltd.

12 3 4 5 6 7...10

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