Datasheet > MMD60R580PRH

MMD60R580PRH

更新时间： 2024-09-16 01:16:47

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
10页	1074K
描述
600V 0.58(ohm) N-channel MOSFET

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MMD60R580PRH 数据手册

MMD60R580P Datasheet

MMD60R580P

600V 0.58Ω N-channel MOSFET

 Description

MMD60R580P is power MOSFET using magnachip’s advanced super junction technology that can

realize very low on-resistance and gate charge. It will provide much high efficiency by using

optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

designers as well as low switching loss.

 Key Parameters

 Package & Internal Circuit

Parameter

V_DS@ T_j,max

R_DS(on),max

V_TH,typ

Value

Unit

650

0.58

Ω

I_D

Q_g,typ

 Features

 Low Power Loss by High Speed Switching and Low On-Resistance

 100% Avalanche Tested

 Green Package – Pb Free Plating, Halogen Free

 Applications

 PFC Power Supply Stages

 Switching Applications

 Adapter

 Motor Control

 DC – DC Converters

 Ordering Information

Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMD60R580PRH

60R580P

-55 ~ 150℃

D-PAK (TO-252) Reel & Tape

Halogen Free

Jun. 2013 Revision 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7...10

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