Datasheet > MMBZ52XXB-T1

MMBZ52XXB-T1

更新时间： 2024-11-08 03:13:23

品牌	Logo	应用领域
WTE		稳压二极管
页数	文件大小	规格书
4页	76K
描述
350mW SURFACE MOUNT ZENER DIODE

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中文翻译

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数据手册

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MMBZ52XXB-T1 数据手册

WTE

POWER SEMICONDUCTORS

MMBZ5221B – MMBZ5262B

350mW SURFACE MOUNT ZENER DIODE

Features

ꢀ

Planar Die Construction

ꢀ

350mW Power Dissipation

2.4 – 51V Nominal Zener Voltage

5% Standard Vz Tolerance

Designed for Surface Mount Application

Plastic Material – UL Recognition Flammability

Classification 94V-O

SOT-23

Min

Dim

Max

0.51

1.40

2.50

1.05

0.61

2.05

3.05

0.15

1.10

0.61

0.178

0.37

1.19

2.10

0.89

0.45

1.78

2.65

0.013

0.89

0.45

0.076

Mechanical Data

ꢀ

Case: SOT-23, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

ꢀ

Polarity: See Diagram

Weight: 0.008 grams (approx.)

Mounting Position: Any

Marking: Device Code, See Page 2

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

All Dimensions in mm

TOP VIEW

Maximum Ratings @T_A=25°C unless otherwise specified

Characteristic

Peak Pulse Power Dissipation at T_A= 25°C (Note 1)

Forward Voltage @ IF = 10mA

Symbol

Value

350

Unit

0.9

Thermal Resistance Junction to Ambient (Note 1)

Operating and Storage Temperature Range

RθJA

Tj, TSTG

357

°C/W

°C

-65 to +150

Note: 1. Valid provided that device terminals are kept at ambient temperature.

MMBZ5221B – MMBZ5262B

1 of 4

12 3 4

中文翻译

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