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MMBZ5V6ALFHT116 PDF预览

MMBZ5V6ALFHT116

更新时间: 2024-12-01 19:57:23
品牌 Logo 应用领域
罗姆 - ROHM 局域网光电二极管
页数 文件大小 规格书
9页 1295K
描述
Trans Voltage Suppressor Diode, 24W, 3V V(RWM), Unidirectional, 2 Element, Silicon,

MMBZ5V6ALFHT116 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50Factory Lead Time:12 weeks
风险等级:7.91其他特性:HIGH RELIABILITY
最大击穿电压:5.88 V最小击穿电压:5.32 V
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-G3
湿度敏感等级:1最大非重复峰值反向功率耗散:24 W
元件数量:2端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.225 W参考标准:AEC-Q101; IEC-61000-4-2
最大重复峰值反向电压:3 V表面贴装:YES
技术:AVALANCHE端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MMBZ5V6ALFHT116 数据手册

 浏览型号MMBZ5V6ALFHT116的Datasheet PDF文件第2页浏览型号MMBZ5V6ALFHT116的Datasheet PDF文件第3页浏览型号MMBZ5V6ALFHT116的Datasheet PDF文件第4页浏览型号MMBZ5V6ALFHT116的Datasheet PDF文件第5页浏览型号MMBZ5V6ALFHT116的Datasheet PDF文件第6页浏览型号MMBZ5V6ALFHT116的Datasheet PDF文件第7页 
MMBZ5V6ALFH  
Transient Voltage suppressor (AEC-Q101 qualified)  
Outline  
Data sheet  
24  
40  
W
W
Ppp  
Feature  
Inner Circuit  
High reliability  
Small mold type  
ESD protection level ±30kV (IEC61000-4-2 Contact)  
Application  
Packaging Specification  
Packing  
Embossed Tape  
ESD Protection  
Reel Size(mm)  
180  
8
Taping Width(mm)  
Basic Ordering Unit(pcs)  
Taping Code  
3000  
T116  
D0M  
Structure  
Silicon Epitaxial Planar  
Marking  
Absolute Maximum Rating (Ta=25ºC)  
Parameter  
Symbol  
Conditions  
Min. Max. Unit  
tp=10/1000μs  
PPP  
Peak pulse power  
MMBZ5V6ALFH thru MMBZ10VALFH  
MMBZ12VALFH thru MMBZ33VALFH  
-
-
24  
40  
W
W
Air discharge  
IEC61000-4-2  
-
-
-
±30  
±30  
±2  
kV  
kV  
V
Contact  
VESD  
Electrostatic discharge voltage*  
Machine model  
Human body model  
-
±8  
kV  
ºC  
ºC  
mW  
mW  
Tj  
Tstg  
Junction temperature  
Storage temperature  
-
-
-
-65  
-
150  
150  
225  
300  
on Glass-epoxy substrate  
on Alumina substrate  
Pd  
Power dissipation  
-
IEC61000-4-2  
Machine model  
C=150pF R=330Ω  
C=200pF R=0Ω  
*
Human body model C=100pF R=1.5kΩ  
www.rohm.com  
1/6  
© 2016 ROHM Co., Ltd. All rights reserved.  
2016/5/31_Rev.001  

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