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MMBZ6V2AL PDF预览

MMBZ6V2AL

更新时间: 2024-09-21 15:19:39
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
11页 210K
描述
Low capacitance unidirectional double ESD protection diodeProduction

MMBZ6V2AL 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.71其他特性:IEC-61643-321
最大击穿电压:6.51 V最小击穿电压:5.89 V
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:24 W
元件数量:2端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.29 W参考标准:AEC-Q101; IEC-60134; IEC-61000-4-2
最大重复峰值反向电压:3 V表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MMBZ6V2AL 数据手册

 浏览型号MMBZ6V2AL的Datasheet PDF文件第2页浏览型号MMBZ6V2AL的Datasheet PDF文件第3页浏览型号MMBZ6V2AL的Datasheet PDF文件第4页浏览型号MMBZ6V2AL的Datasheet PDF文件第5页浏览型号MMBZ6V2AL的Datasheet PDF文件第6页浏览型号MMBZ6V2AL的Datasheet PDF文件第7页 
MMBZ6V2AL  
Low capacitance unidirectional double ESD protection diode  
16 August 2023  
Product data sheet  
1. General description  
Unidirectional double ElectroStatic Discharge (ESD) protection diode in a common anode  
configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic  
package. The device is designed for ESD and transient overvoltage protection of up to two signal  
lines.  
2. Features  
Unidirectional ESD protection of two lines  
Bidirectional ESD protection of one line  
Low diode capacitance: Cd ≤ 230 pF  
Rated peak pulse power: PPPM = 24 W  
Ultra low leakage current: IRM = 200 nA  
ESD protection up to 30 kV (contact discharge)  
IEC 61000-4-2; level 4 (ESD)  
IEC 61643-321  
AEC101 qualified  
3. Applications  
Computers and peripherals  
Audio and video equipment  
Cellular handsets and accessories  
Automotive electronic control units  
Portable electronics  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
3
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
-
175  
230  
pF  
 
 
 
 

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