Datasheet > MMBZ16VAL-Q

MMBZ16VAL-Q

更新时间： 2024-11-14 11:12:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	257K
描述
High surge current unidirectional double ESD protection diodeProduction

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MMBZ16VAL-Q 数据手册

MMBZ16VAL-Q

High surge current unidirectional double ESD protection

diode

4 October 2022

Product data sheet

1. General description

Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode

configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic

package. The device is designed for ESD and transient overvoltage protection of up to two signal

lines.

2. Features and benefits

•

Unidirectional protection of two lines

•

Reverse standoff voltage: V_RWM= 13 V

Average measured surge robustness: I_PPM= 14 A (8/20 µs) / I_PPM= 2.54 A (10/1000 µs)

Typical reverse leakage current: I_RM= 0.1 nA

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Automotive in-vehicle networks protection

Industrial application

Power management

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_j= 25 °C

I_PPM

V_CL

rated peak pulse

current

t_p= 10/1000 µs

[1] [2]

1.9

clamping voltage

I_PP= 1.7 A; t_p= 10/1000 µs; T_j= 25 °C [1] [2]

19.5

[1] According to IEC 61643-321.

[2] Measured from pin 1 or 2 to pin 3.

12 3 4 5 6 7...13

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